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    "Hard-switching linear V/I overlap.",
    "Conduction current_basis contract is identical to electrical.mosfet.conduction_loss.",
    "Coss term is lumped or Eoss-at-Vds — not a Qoss(V) integral.",
    "P_gate is drive-circuit power, not die dissipation.",
    "P_rr is commutation loss, usually not this MOSFET.",
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    "First-order hard-switching workspace — not Eon/Eoff tables, Qoss(V) curves, or compact models",
    "Conduction uses electrical.mosfet.conduction_loss; switching/gate use electrical.mosfet.switching_loss",
    "Default α = 0.006 /°C is a Si planning default, not manufacturer validated",
    "P_coss from ½·Coss·V²·f is a lumped equivalent — prefer datasheet Eoss at Vds",
    "Overlap P_sw plus P_coss may overestimate due to double counting; first-order only — validate against measured Eon/Eoff",
    "P_rr = Qrr·Vds·f is recovered-charge commutation loss, usually attributed to the complementary switch — not this die",
    "P_gate is gate-drive power (driver + Rg + Rg,int) — not MOSFET junction dissipation; Tj_est uses P_device only",
    "Tj_est is steady-state RthJA only — not Zth or CFD",
    "Numeric 0 on omitted P_gate/P_coss/P_rr means not included (see terms_omitted), not a measured zero",
    "Optional Qg/Coss/Eoss/Qrr if present must be > 0; explicit 0 is not yet a supported known-zero state",
    "Qg and Vdrive must both be present or both omitted (else NEEDS_TWO_INPUTS)"
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  "boundary_conditions": [
    "Missing required conduction or switching field → MISSING_REQUIRED_INPUT",
    "≤ 0 on required positives → VALUE_MUST_BE_POSITIVE",
    "Non-finite number → INVALID_NUMBER",
    "D not in (0, 1] when applied → FRACTION_OUT_OF_RANGE",
    "Qg XOR Vdrive → NEEDS_TWO_INPUTS",
    "Unknown current_basis, temperature_model, or coss_model → INVALID_MODE",
    "coss_model=eoss without Eoss, or coss_eq without Coss → MISSING_REQUIRED_INPUT",
    "Optional Qg/Coss/Eoss/Qrr if present must be > 0 → VALUE_MUST_BE_POSITIVE (explicit 0 is not yet a supported known-zero state; omit for unknown)",
    "Coss and Eoss both set → warning EOSS_OVERRIDES_COSS (Eoss wins)",
    "Only one of Ta_C / Rth_JA → warning THERMAL_NOT_APPLIED",
    "current_basis=dc with f_sw > 0 → info DC_CURRENT_WITH_SWITCHING",
    "Qg+Vdrive present → info GATE_NOT_IN_DEVICE",
    "Qrr present → info QRR_NOT_IN_DEVICE"
  ],
  "sources": [
    {
      "title": "Infineon — OptiMOS device selection for synchronous rectification",
      "section": "Conduction losses P_cond = I_RMS² × RDS(on)",
      "url": "https://www.infineon.com/dgdl/Infineon-MOSFET_OptiMOS_device_selection_for_synchronous_rectification-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c85ecb34701865afe0f7d3f05",
      "supports": "MOSFET RMS current (not converter output current) for conduction; first-order loss stack",
      "kind": "reference",
      "accessed": "2026-08-14"
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    {
      "title": "Texas Instruments SLYT664 — MOSFET power losses and how they affect power-supply efficiency",
      "section": "Conduction, switching, gate, and output capacitance",
      "url": "https://www.ti.com/lit/pdf/slyt664",
      "supports": "P_cond = I_RMS²·RDS(on); P_sw ≈ ½·V·I·(tr+tf)·f; P_gate = Qg·Vdrive·f",
      "kind": "reference",
      "accessed": "2026-08-14"
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    {
      "title": "Texas Instruments SLUA618 — Fundamentals of MOSFET and IGBT Gate Driver Circuits",
      "section": "Gate-drive energy split among driver and gate resistance",
      "url": "https://www.ti.com/lit/pdf/slua618",
      "supports": "P_gate is not entirely dissipated in the MOSFET junction",
      "kind": "reference",
      "accessed": "2026-08-16"
    },
    {
      "title": "Erickson & Maksimović — Fundamentals of Power Electronics",
      "section": "Semiconductor conduction and switching loss",
      "supports": "I_rms conduction and linear-transition switching estimates",
      "kind": "reference"
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